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IXDD414PI / 414YI / 414CI
14 Amp Low-Side Ultrafast MOSFET Driver
Features
* Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. * Latch-Up Protected * High Peak Output Current: 14A Peak * Wide Operating Range: 4.5V to 25V * Ability to Disable Output under Faults * High Capacitive Load Drive Capability: 15nF in <30ns * Matched Rise And Fall Times * Low Propagation Delay Time * Low Output Impedance * Low Supply Current
General Description
The IXDD414 is a high speed high current gate driver specifically designed to drive the largest MOSFETs and IGBTs to their minimum switching time and maximum practical frequency limits. The IXDD414 can source and sink 14A of peak current while producing voltage rise and fall times of less than 30ns. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction/current shootthrough is virtually eliminated in the IXDD414. Its features and wide safety margin in operating voltage and power make the IXDD414 unmatched in performance and value. The IXDD414 incorporates a unique ability to disable the output under fault conditions. When a logical low is forced into the Enable input, both final output stage MOSFETs (NMOS and PMOS) are turned off. As a result, the output of the IXDD414 enters a tristate mode and achieves a Soft Turn-Off of the MOSFET/IGBT when a short circuit is detected. This helps prevent damage that could occur to the MOSFET/IGBT if it were to be switched off abruptly due to a dv/dt over-voltage transient. The IXDD414 is available in the standard 8-pin P-DIP (PI), 5-pin TO-220 (CI) and in the TO-263 (YI) surface-mount package.
Applications
* * * * * * * * * * Driving MOSFETs and IGBTs Limiting di/dt under Short Circuit Motor Controls Line Drivers Pulse Generators Local Power ON/OFF Switch Switch Mode Power Supplies (SMPS) DC to DC Converters Pulse Transformer Driver Class D Switching Amplifiers
Figure 1 - Functional Diagram
200 k
Copyright (c) IXYS CORPORATION 2001
Patent Pending
First Release
IXDD414PI/414YI/414CI
Absolute Maximum Ratings (Note 1)
Parameter Supply Voltage All Other Pins Value 25 V -0.3 V to VCC + 0.3 V
Operating Ratings
Parameter Maximum Junction Temperature Operating Temperature Range Value 150 oC
Power Dissipation, TAMBIENT 25 oC 8 Pin PDIP (PI) 975mW TO220 (CI), TO263 (YI) 12W Derating Factors (to Ambient) 8 Pin PDIP (PI) 7.6mW/oC TO220 (CI), TO263 (YI) 0.1W/oC Storage Temperature -65 oC to 150 oC Lead Temperature (10 sec) 300 oC
-40 oC to 85 oC Thermal Impedance (Junction To Case) TO220 (CI), TO263 (YI) (JC) 0.55 oC/W
Electrical Characteristics
Symbol VIH VIL VIN IIN VOH VOL ROH ROL IPEAK IDC VEN VENH VENL tR tF tONDLY tOFFDLY tENOH tDOLD VCC ICC Parameter High input voltage Low input voltage
Unless otherwise noted, TA = 25 oC, 4.5V VCC 25V . All voltage measurements with respect to GND. IXDD414 configured as described in Test Conditions.
Test Conditions
Min 3.5
Typ
Max 0.8
Units V V V A V
Input voltage range Input current High output voltage Low output voltage Output resistance @ Output high Output resistance @ Output Low Peak output current Continuous output current Enable voltage range High En Input Voltage Low En Input Voltage Rise time Fall time On-time propagation delay Off-time propagation delay Enable to output high delay time Disable to output low disable delay time Power supply voltage Power supply current CL=15nF Vcc=18V CL=15nF Vcc=18V CL=15nF Vcc=18V CL=15nF Vcc=18V Vcc=18V Vcc=18V IOUT = 10mA, VCC = 18V IOUT = 10mA, VCC = 18V VCC is 18V 0V VIN VCC
-5 -10 VCC - 0.025
VCC + 0.3 10
0.025 600 600 14 3 4 Vcc + 0.3 1/3 Vcc 23 21 29 29 25 22 30 31 29 26 33 34 40 30 4.5 VIN = 3.5V VIN = 0V VIN = + VCC 18 1 0 200 25 3 10 10 1000 1000
V m m A A A V V V ns ns ns ns ns ns V mA A A k
8 Pin Dip (PI) (Limited by pkg power dissipation) TO220 (CI), TO263 (YI) - 0.3 2/3 Vcc
REN
Enable Pull-up Resistor
Specifications Subject To Change Without Notice
2
IXDD414PI/414YI/414CI
Pin Configurations
IX D D 4 1 4 Y I IX D D 4 1 4 C I
1 VCC 2 IN 3 EN 4 GND
I X D D 4 1 4
VCC 8 OUT 7 OUT 6 GND 5
1 2 3 4 5
Vcc OUT GND IN EN
8 PIN DIP (PI)
TO220 (CI) TO263 (YI)
Pin Description
SYMBOL VCC IN EN OUT FUNCTION Supply Voltage Input Enable Output DESCRIPTION Positive power-supply voltage input. This pin provides power to the entire chip. The range for this voltage is from 4.5V to 25V. Input signal-TTL or CMOS compatible. The system enable pin. This pin, when driven low, disables the chip, forcing high impedance state to the output. Driver Output. For application purposes, this pin is connected, through a resistor, to Gate of a MOSFET/IGBT. The system ground pin. Internally connected to all circuitry, this pin provides ground reference for the entire chip. This pin should be connected to a low noise analog ground plane for optimum performance.
GND
Ground
Note 1: Operating the device beyond parameters with listed "absolute maximum ratings" may cause permanent damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and assembling this component.
Figure 2 - Characteristics Test Diagram
VIN
3
IXDD414PI/414YI/414CI
Typical Performance Characteristics
Fig. 3
40
Rise Time vs. Supply Voltage
Fig. 4
40
Fall Time vs. Supply Voltage
30 CL=15,000 pF
30
Rise Time (ns)
Fall Time (ns)
20 7,500 pF
20
CL=15,000 pF
7,500 pF
10
3,600 pF
10
3,600 pF
0 8 10 12 14 16 18
0 8 10 12 14 16 18
Supply Voltage (V)
Fig. 5
40 35 40 30 25
Supply Voltage (V)
Fig. 6
50
Rise And Fall Times vs. Junction Temperature CL = 15 nF, Vcc = 18V
Rise Time vs. Load Capacitance
8V 10V 12V
tR
Rise Time (ns)
Time (ns)
tF
20 15 10
30
18V 14V 16V
20
10 5 0 -40 0 0k
-20
0
20
40
60
80
100
120
5k
10k
15k
20k
Temperature (C)
Fig. 7
40
Load Capacitance (pF)
Fig. 8
3.2 3.0
Fall Time vs. Load Capacitance
Max / Min Input vs. Junction Temperature VCC=18V CL=15nF
14V 12V 30
8V 10V
2.8
Minimum Input High
Max / Min Input (V)
2.6 2.4 2.2 2.0
Fall Time (ns)
16V18V 20
Maximum Input Low
10
1.8 1.6 -60
0 0k
-40
-20
0
20
40
60
80
100
5k
10k
15k
20k
Load Capacitance (pF)
4
Temperature (oC)
IXDD414PI/414YI/414CI
Fig. 9
1000
Supply Current vs. Load Capacitance Vcc=18V
Fig. 10
Supply Current vs. Frequency Vcc=18V
1000 CL= 30 nF 100 2 MHz 1 MHz 500 kHz 10 100 kHz 50 kHz 100 15 nF
Supply Current (mA)
Supply Current (mA)
5000 pF 10 2000 pF
1
1 1k
0.1 10k 100k 10 100 1000 10000
Load Capacitance (pF)
Fig. 11
Frequency (kHz)
Fig. 12
Supply Current vs. Load Capacitance Vcc=12V
Supply Current vs. Frequency Vcc=12V
1000
1000
CL = 30 nF 100
Supply Current (mA)
2 MHz 1 MHz 500 kHz 10
Supply Current (m A)
100
15 nF
10
5000 pF 2000 pF
1
100 kHz 50 kHz 1 1k
0.1
10k
100k
10
100
1000
10000
Load Capacitance (pF)
Fig. 13
Frequency (kHz)
Fig. 14
1000
Supply Current vs. Load Capacitance Vcc=8V
Supply Current vs. Frequency Vcc=8V
1000
100
CL= 30 nF 15 nF
Supply Current (mA)
Supply Current (mA)
100
2 MHz 1 MHz 10 500 kHz
10 5000 pF 2000 pF 1
100 kHz 1 50 kHz 1k 10k 100k
0.1 10 100 1000 10000
Load Capacitance (pF)
5
Frequency (kHz)
IXDD414PI/414YI/414CI
Fig. 15
50
Propagation Delay vs. Supply Voltage CL=15nF VIN=5V@1kHz tOFFDLY
Propagation Delay (ns)
Fig. 16
50
Propagation Delay vs. Input Voltage CL=15nF VCC=15V
40
40
Propagation Delay (ns)
tONDLY
30
tONDLY
30
20
20
tOFFDLY
10
10
0 8 10 12 14 16 18
0 2 4 6 8 10 12
Supply Voltage (V)
Input Voltage (V)
Fig. 17 Propagation Delay Times vs. Junction Temperature
CL = 2500pF, VCC = 18V
50 45 40 35
Fig. 18 Quiescent Supply Current vs. Junction Temperature
0.60
VCC=18V VIN=5V@1kHz
Time (ns)
tOFFDLY
Quiescent Supply Current (mA)
tONDLY
0.58
0.56
30 25 20 15 10 -40 -20 0 20 40 60 80 100 120
0.54
0.52
0.50 -40 -20 0 20 40 60 80
Temperature (C)
Fig. 19
16
Temperature (oC)
Fig. 20 N Channel Peak Output Current vs. Case Temperature
CI and YI Packages, VCC=18V CL=.1uF
17
P Channel Peak Output Current vs. Case Temperature CI and YI Packages, VCC=18V CL=.1uF
P Channel Output Current (A)
N Channel Output Current (A)
15
16
14
15
13
12 -40 -20 0 20 40 60 80 100
14 -40 -20 0 20 40 60 80 100
Temperature (oC)
Temperature (oC)
6
IXDD414PI/414YI/414CI
Fig. 22 Fig. 21
14
Enable Threshold vs. Supply Voltage
1.0
High State Output Resistance vs. Supply Voltage
12
Enable Threshold (V)
10
8
6
4
2
0 8 10 12 14 16 18 20 22 24 26
High State Output Resistance (Ohm)
0.8
0.6
0.4
0.2
0.0 8 10 15 20 25
Supply Voltage (V)
Fig. 23
1.0
Supply Voltage (V)
Low-State Output Resistance vs. Supply Voltage
Fig. 24
0 -2
VCC vs. P Channel Output Current CL=.1uF VIN=0-5V@1kHz
Low-State Output Resistance (Ohms)
0.8
-4
P Channel Output Current (A)
8 10 15 20 25
-6 -8 -10 -12 -14 -16 -18 -20 -22
0.6
0.4
0.2
0.0
-24 8 10 15 20 25
Supply Voltage (V)
Fig. 25
Vcc
Vcc vs. N Channel Output Current CL=.1uF VIN=0-5V@1kHz
Figure 26 - Typical Application Short Circuit di/dt Limit
24 22 20
N Channel Output Current (A)
18 16 14 12 10 8 6 4 2 0 8 10 15 20 25
Vcc
7
IXDD414PI/414YI/414CI
APPLICATIONS INFORMATION
Short Circuit di/dt Limit
A short circuit in a high-power MOSFET module such as the VM0580-02F, (580A, 200V), as shown in Figure 26, can cause the current through the module to flow in excess of 1500A for 10s or more prior to self-destruction due to thermal runaway. For this reason, some protection circuitry is needed to turn off the MOSFET module. However, if the module is switched off too fast, there is a danger of voltage transients occuring on the drain due to Ldi/dt, (where L represents total inductance in series with drain). If these voltage transients exceed the MOSFET's voltage rating, this can cause an avalanche breakdown. The IXDD414 has the unique capability to softly switch off the high-power MOSFET module, significantly reducing these Ldi/dt transients. Thus, the IXDD414 helps to prevent device destruction from both dangers; over-current, and avalanche breakdown due to di/dt induced over-voltage transients. The IXDD414 is designed to not only provide 14A under normal conditions, but also to allow it's output to go into a high impedance state. This permits the IXDD414 output to control a separate weak pull-down circuit during detected overcurrent shutdown conditions to limit and separately control dVGS/dt gate turnoff. This circuit is shown in Figure 27. Referring to Figure 27, the protection circuitry should include a comparator, whose positive input is connected to the source of the VM0580-02. A low pass filter should be added to the input of the comparator to eliminate any glitches in voltage caused by the inductance of the wire connecting the source resistor to ground. (Those glitches might cause false triggering of the comparator). The comparator's output should be connected to a SRFF(Set Reset Flip Flop). The flip-flop controls both the Enable signal, and the low power MOSFET gate. Please note that CMOS 4000series devices operate with a VCC range from 3 to 15 VDC, (with 18 VDC being the maximum allowable limit). A low power MOSFET, such as the 2N7000, in series with a resistor, will enable the VMO580-02F gate voltage to drop gradually. The resistor should be chosen so that the RC time constant will be 100us, where "C" is the Miller capacitance of the VMO580-02F. For resuming normal operation, a Reset signal is needed at the SRFF's input to enable the IXDD414 again. This Reset can be generated by connecting a One Shot circuit between the IXDD414 Input signal and the SRFF restart input. The One Shot will create a pulse on the rise of the IXDD414 input, and this pulse will reset the SRFF outputs to normal operation. When a short circuit occurs, the voltage drop across the lowvalue, current-sensing resistor, (Rs=0.005 Ohm), connected between the MOSFET Source and ground, increases. This triggers the comparator at a preset level. The SRFF drives a low input into the Enable pin disabling the IXDD408 output. The SRFF also turns on the low power MOSFET, (2N7000). In this way, the high-power MOSFET module is softly turned off by the IXDD414, preventing its destruction.
Figure 27 - Application Test Diagram
+
Ld 10uH
-
VB
IXDD414 VCC VCCA IN EN
+ -
Rd 0.1ohm Rg OUT Rsh 1600ohm 1ohm
High_Power VMO580-02F
VCC
+ -
VIN
GND SUB Rs Low_Power 2N7002/PLP R+ 10kohm Ls 20nH
One ShotCircuit Rcomp 5kohm NOT1 CD4049A Ros 1Mohm Cos 1pF Q R REF NAND CD4011A NOT2 CD4049A Ccomp 1pF 0 Comp LM339 + V+ V+ -
C+ 100pF
NOT3 CD4049A EN
NOR1 CD4001A
S
NOR2 CD4001A
SR Flip-Flop
8
IXDD414PI/414YI/414CI
Supply Bypassing and Grounding Practices, Output Lead inductance
When designing a circuit to drive a high speed MOSFET utilizing the IXDD414, it is very important to keep certain design criteria in mind, in order to optimize performance of the driver. Particular attention needs to be paid to Supply Bypassing, Grounding, and minimizing the Output Lead Inductance. Say, for example, we are using the IXDD414 to charge a 5000pF capacitive load from 0 to 25 volts in 25ns. Using the formula: I= V C / t, where V=25V C=5000pF & t=25ns we can determine that to charge 5000pF to 25 volts in 25ns will take a constant current of 5A. (In reality, the charging current won't be constant, and will peak somewhere around 8A). SUPPLY BYPASSING In order for our design to turn the load on properly, the IXDD414 must be able to draw this 5A of current from the power supply in the 25ns. This means that there must be very low impedance between the driver and the power supply. The most common method of achieving this low impedance is to bypass the power supply at the driver with a capacitance value that is a magnitude larger than the load capacitance. Usually, this would be achieved by placing two different types of bypassing capacitors, with complementary impedance curves, very close to the driver itself. (These capacitors should be carefully selected, low inductance, low resistance, high-pulse currentservice capacitors). Lead lengths may radiate at high frequency due to inductance, so care should be taken to keep the lengths of the leads between these bypass capacitors and the IXDD414 to an absolute minimum. GROUNDING In order for the design to turn the load off properly, the IXDD414 must be able to drain this 5A of current into an adequate grounding system. There are three paths for returning current that need to be considered: Path #1 is between the IXDD414 and it's load. Path #2 is between the IXDD414 and it's power supply. Path #3 is between the IXDD414 and whatever logic is driving it. All three of these paths should be as low in resistance and inductance as possible, and thus as short as practical. In addition, every effort should be made to keep these three ground paths distinctly separate. Otherwise, (for instance), the returning ground current from the load may develop a voltage that would have a detrimental effect on the logic line driving the IXDD414. OUTPUT LEAD INDUCTANCE Of equal importance to Supply Bypassing and Grounding are issues related to the Output Lead Inductance. Every effort should be made to keep the leads between the driver and it's load as short and wide as possible. If the driver must be placed farther than 2" from the load, then the output leads should be treated as transmission lines. In this case, a twisted-pair should be considered, and the return line of each twisted pair should be placed as close as possible to the ground pin of the driver, and connect directly to the ground terminal of the load.
TTL to High Voltage CMOS Level Translation
The enable (EN) input to the IXDD414 is a high voltage CMOS logic level input where the EN input threshold is 1/2 VCC, and may not be compatible with 5V CMOS or TTL input levels. The IXDD414 EN input was intentionally designed for enhanced noise immunity with the high voltage CMOS logic levels. In a typical gate driver application, VCC =15V and the EN input threshold at 7.5V, a 5V CMOS logical high input applied to this typical IXDD414 application's EN input will be misinterpreted as a logical low, and may cause undesirable or unexpected results. The note below is for optional adaptation of TTL or 5V CMOS levels. The circuit in Figure 28 alleviates this potential logic level misinterpretation by translating a TTL or 5V CMOS logic input to high voltage CMOS logic levels needed by the IXDD414 EN input. From the figure, VCC is the gate driver power supply, typically set between 8V to 20V, and VDD is the logic power supply, typically between 3.3V to 5.5V. Resistors R1 and R2 form a voltage divider network so that the Q1 base is positioned at the midpoint of the expected TTL logic transition levels. A TTL or 5V CMOS logic low, VTTLLOW=~<0.8V, input applied to the Q1 emitter will drive it on. This causes the level translator output, the Q1 collector output to settle to VCESATQ1 + VTTLLOW=<~2V, which is sufficiently low to be correctly interpreted as a high voltage CMOS logic low (<1/3VCC=5V for VCC =15V given in the IXDD414 data sheet.) A TTL high, VTTLHIGH=>~2.4V, or a 5V CMOS high, V5VCMOSHIGH=~>3.5V, applied to the EN input of the circuit in Figure 28 will cause Q1 to be biased off. This results in Q1 collector being pulled up by R3 to VCC=15V, and provides a high voltage CMOS logic high output. The high voltage CMOS logical EN output applied to the IXDD414 EN input will enable it, allowing the gate driver to fully function as an 8 Amp output driver. The total component cost of the circuit in Figure 28 is less than $0.10 if purchased in quantities >1K pieces. It is recommended that the physical placement of the level translator circuit be placed close to the source of the TTL or CMOS logic circuits to maximize noise rejection.
Figure 28 - TTL to High Voltage CMOS Level Translator
CC (From Gate Driver Power Supply)
10K
R3
V DD
(From Logic Power Supply) 3.3K R1 Q1 2N3904 3.3K R2
High Voltage CMOS EN Output
(To IXDD414 EN Input)
or TTL Input)
9
IXDD414PI/414YI/414CI
Ordering Information
Part Number IXDD414PI IXDD414YI IXDD414CI Package Type 8-Pin PDIP 5-Pin TO-263 5-Pin TO-220 Temp. Range -40C to +85C -40C to +85C -40C to +85C Grade Industrial Industrial Industrial
NOTE: Mounting or solder tabs on all packages are connected to ground
IXYS Corporation 3540 Bassett St; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 e-mail: sales@ixys.net IXYS Semiconductor GmbH Edisonstrasse15 ; D-68623; Lampertheim Tel: +49-6206-503-0; Fax: +49-6206-503627 e-mail: marcom@ixys.de Directed Energy, Inc. An IXYS Company 2401 Research Blvd. Ste. 108, Ft. Collins, CO 80526 Tel: 970-493-1901; Fax: 970-493-1903 e-mail: deiinfo@directedenergy.com
10
Doc #9200-0228 R6

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